As the global chip process technology continues to evolve, South Korean technology giant Samsung Electronics announced that it has begun mass production of the third-generation 10nm-class LPDDR5 DRAM chips using extreme ultraviolet (EUV) lithography technology, leading the industry. The DRAM process is also expected to move towards single-digit nanometer processes in the future.

Samsung Electronics announced that the company’s second semiconductor production line in Pyeongtaek, South Korea, has begun mass production of the world’s third-generation 10-nanometer LPDDR5 DRAM chips, reaching the industry’s largest capacity and fastest speed.

Samsung Electronics’ latest 10-nanometer-level LPDDR5 DRAM chip has a transmission speed of up to 6400Mb/s, which is 16% faster than the 12 GB LPDDR5 DRAM chip of flagship smartphones currently in the market. The company also pointed out that a smartphone equipped with 16 GB of memory will be able to transmit 51.2 GB of data per second, equivalent to 10 high-quality movies.

In addition, the latest 10-nanometer-level LPDDR5 DRAM chips are also 30% thinner than previous products, which will help products equipped with multiple components, such as high-end camera phones or 5G phones as well as products with thickness considerations like foldable mobile phones to provide the best solution.

The report pointed out that in February of this year, Samsung Electronics had begun mass production of 16GB LPDDR5 DRAM using the second-generation 10nm-level process technology.  In just six months, the company further strengthened its high-end mobile DRAM product portfolio, including the introduction of next-generation chip manufacturing technology.

In the DRAM field, South Korea’s SK Hynix ranks second in the world, and it’s market share just remains second only to Samsung Electronics. Today, SK Hynix is also actively researching and applying EUV technology to the fourth-generation 10nm products, and plans to achieve mass production in 2021. Compared with Samsung Electronics, SK Hynix is about six months to one year behind.