According to the official WeChat of the Chinese Academy of Sciences Shanghai Institute of Microsystems, Wei Xing’s research team recently made breakthrough progress in the manufacturing technology of 300mm SOI wafers, and produced the first 300mm radio frequency (RF) SOI wafer in China.
The team, based on the 300mm SOI research and development platform of the National Key Laboratory of Integrated Circuit Materials, has successively solved many core technical problems such as low oxygen and high resistance crystal preparation, low stress and high resistivity polycrystalline silicon film deposition, non-contact planarization, etc. required for 300mm RF-SOI wafers, achieving a significant breakthrough in the manufacturing technology of 300mm SOI in China from scratch. The independent preparation of 300mm RF-SOI wafers will effectively promote the coordinated and rapid development of the entire industry chain of domestic RF-SOI chip design, OEM, and packaging, and provide a solid guarantee for the supply security of domestic SOI wafers.
The range of components that SOI can use is very wide, such as RF SOI applications in communication RF front-end, high-power Power SOI components, optical communication Photonics SOI technology, and so on. Silicon on insulator (SOI) technology is a new technology that has emerged on the basis of the tremendous success of silicon materials and silicon integrated circuits, has its unique advantages, and can break through the limitations of silicon materials and silicon integrated circuits.