Recently, CNMO learned that the research teams of Osaka University, Sanchong University and Cornell University in Japan have developed a semiconductor film forming technology for 6G. It is reported that this technology can remove impurities generated in the film forming process and improve the conductivity of the transistor material to about 4 times. Relevant media reported that the technology is planned to be used for industrial purposes, such as increasing power on high-speed wireless communication base stations.

According to relevant media reports, transistors with strong conductivity are needed to achieve ultra-high speed communication. This hard requirement makes high electron mobility transistors with electron generation layers and electron transfer layers stacked on the substrate concerned. According to the current technology, the electronic generation layer mostly uses aluminum gallium nitride, among which, the content of aluminum nitride with strong conductivity is 20-30%, and the new technology will increase the ratio of aluminum nitride.

According to relevant media reports, the above research team has developed a manufacturing technology of high electron mobility transistor (HEMT) using aluminum nitride instead of aluminum gallium nitride. In the previous technology, the aluminum nitride surface is oxidized during film formation, and the resulting oxygen impurities change the crystallization of aluminum nitride, making it difficult to obtain high conductivity. The new technology can solve this problem by forming a very thin aluminum film to reduce the oxide film on the surface and volatilize it. Finally, the conductivity is increased to 3-4 times of the original.

The technology features that it does not need to use the more expensive aluminum nitride substrate, but can instead realize this structure on a larger sapphire substrate with a diameter of about 5cm. It is reported that the research team plans to use a more practical method to trial produce high electron mobility transistors within one year.